Compute-in-memory (CIM) has emerged as a compelling approach to address the ever-increasing demand for energy-efficient computing for edge artificial intelligence (AI) applications. Nonvolatile capacitive synapses have been recently proposed to further boost the energy and area efficiency of CIM hardware with the following attractive features when compared with resistive synapses: negligible static power consumption, selectorless…
IEEE Electron Devices Magazine Template
Write in a clean editor, then format for IEEE Electron Devices Magazine in one click — DocuGuru applies the official IEEE template with numbered references and exports a submission-ready PDF plus the editable LaTeX source. Free to start.
About the IEEE Electron Devices Magazine format
IEEE Electron Devices Magazine is a peer-reviewed journal published by IEEE, covering Diverse Scientific and Economic Studies, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Negative Capacitance Devices. Over its lifetime it has published 216 papers, which have received 251 citations.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Electron Devices Magazine, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Electron Devices Magazine style. No sign-up. |
| Publishes research in | Diverse Scientific and Economic Studies Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices Geochemistry and Geologic Mapping Geological Modeling and Analysis |
| ISSN | 2832-7683 |
| Citation impact (2-yr) | 0.85 |
| h-index | 8 |
| i10-index | 8 |
| Top institutions publishing here | Georgia Institute of Technology |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Papers published in IEEE Electron Devices Magazine per year
Citation impact of IEEE Electron Devices Magazine by publication year
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Most-cited papers in IEEE Electron Devices Magazine
In modern high-end integrated circuits (ICs) one can find billions of active elements. These ICs fuel devices like mobile phones, complex graphical engines, servers, and high-end supercomputers. This would not be possible without optical lithography, allowing for a continuous shrink in the dimensions of the individual active elements. Many technological developments over the last decades…
Gallium oxide (Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>) is a material with a history of research and development spanning approximately 70 years; however, it had attracted little attention as a semiconductor for a long time. This situation has changed dramatically in the past decade, and its research and development in materials and devices has become active…
In this article, we review the development of emerging memory-based neuromorphic computing. First, we discuss the motivation and advantages of this approach. We then summarize the mechanisms and electrical behaviors of commonly used emerging memory devices as well as their application characteristics in various neuromorphic computing paradigms, including computing in memory (CIM) and other biologically…
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.