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IRE Transactions on Electron Devices is a peer-reviewed journal published by IEEE, covering Gyrotron and Vacuum Electronics Research, Particle accelerators and beam dynamics, Advancements in Semiconductor Devices and Circuit Design.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IRE Transactions on Electron Devices, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IRE Transactions on Electron Devices style. No sign-up. |
| Publishes research in | Gyrotron and Vacuum Electronics Research Particle accelerators and beam dynamics Advancements in Semiconductor Devices and Circuit Design Semiconductor Quantum Structures and Devices Semiconductor materials and devices |
| ISSN | 0096-2430 |
| h-index | 32 |
| i10-index | 129 |
| Total citations | 5,444 |
| Top institutions publishing here | RCA (United States) |
| Journal website | ieeexplore.ieee.org |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
It is shown that the observed falloff in the f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities. The base layer spreading mechanism derives from an analysis of the effect of the current-dependent…
The Ubitron is a high-power traveling-wave tube which makes use of the interaction between a magnetically undulated periodic electron beam and the TE <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">01</inf> mode in unloaded waveguide. The electron-wave interaction exhibits the same type of first-order axial beam bunching characteristic of the conventional slow-wave traveling-wave tube; hence, it can be used in…
This paper describes a theoretical and experimental investigation of a special form of a three-cavity klystron amplifier having shorted sections of a slow-wave structure as resonators. Although the behavior basically is similar to that of a narrow-gap klystron, improved performance is obtained due to distributed interaction and higher cavity characteristic impedance. Higher efficiency and larger…
The electron plasma frequency reduction factor has proved to be a fundamental design parameter in all types of microwave tubes employing long electron beams. This factor is here calculated for a variety of beam shapes and drift-tube cross sections, and the results are presented in a series of graphs. One interesting result is that the…
The current flowing in a semiconductor junction may be divided into four components according to the location of the recombination and generation of electrons and holes. These are: 1) the bulk recombination-generation or the diffusion current, 2) the bulk recombination-generation current in the transition region, 3) the surface recombination-generation current in the transition region, and…
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