About the IEEE Magnetics Letters format
IEEE Magnetics Letters is a peer-reviewed journal published by IEEE, covering Magnetic properties of thin films, Magnetic Properties and Applications, Physics of Superconductivity and Magnetism. Over its lifetime it has published 956 papers, which have received 9,414 citations.
| Publisher | IEEE |
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| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text
[1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Magnetics Letters, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Magnetics Letters style. No sign-up.
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| Publishes research in | Magnetic properties of thin films Magnetic Properties and Applications Physics of Superconductivity and Magnetism Magneto-Optical Properties and Applications Quantum and electron transport phenomena |
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| ISSN | 1949-307X |
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| Citation impact (2-yr) | 1.04 |
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| h-index | 40 |
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| i10-index | 282 |
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| Top institutions publishing here | Tohoku University |
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| Journal website | www.ieeemagnetics.org |
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| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
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Papers published in IEEE Magnetics Letters per year
Citation impact of IEEE Magnetics Letters by publication year
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Most-cited papers in IEEE Magnetics Letters
Nanometer-Thick Yttrium Iron Garnet Films With Extremely Low Damping
Houchen Chang, Peng Li, Wei Zhang et al. · 1 Jan 2014
Yttrium iron garnet (YIG) films that are in the nanometer thickness range and show extremely low damping are reported. The films were deposited via sputtering at room temperature and were then annealed in O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math>$_{2}$</tex-math></inline-formula> at high temperature. A 22-nm-thick YIG film showed a Gilbert damping constant <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math>$\alpha = (8.58\pm 0.21)\times…
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
J. Nowak, Ray Robertazzi, J. Z. Sun et al. · 1 Jan 2016
The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switching data at the 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> error level for 655 devices, ranging in diameter…
Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy
Michihiko Yamanouchi, Albrecht Jander, Pallavi Dhagat et al. · 7 Jul 2011
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain-wall surface energy was obtained by analyzing the spatial period of the stripe domains and fitting established domain models to the period. In combination with superconducting quantum interference device measurements of magnetization and…
Asymmetric Interfacial Perpendicular Magnetic Anisotropy in Pt/Co/Pt Trilayers
S. Bandiera, R. C. Sousa, B. Rodmacq et al. · 1 Jan 2011
An asymmetry in the interfacial anisotropies of Pt/Co and Co/Pt interfaces was observed in Pt/Co/Pt sputtered trilayers, the interfacial anisotropy arising from the bottom Pt/Co interface being significantly higher than that from the top Co/Pt one. Interdiffusion at the top interface is believed to be the main factor for this asymmetry. It dramatically decreases the…
Low Energy Magnetic Domain Wall Logic in Short, Narrow, Ferromagnetic Wires
Jean Anne Currivan, Youngman Jang, M. D. Mascaro et al. · 1 Jan 2012
We present circuit simulation results of an implementation of universal logic that operates at low switching energy. Information is stored in the position of a single domain wall in a thin, short ferromagnetic wire. The gate is switched by current-driven domain wall motion, and information is read out using a magnetic tunnel junction. The inputs…
