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IEEE Transactions on Materials for Electron Devices is a peer-reviewed journal published by IEEE, covering Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing. Over its lifetime it has published 76 papers, which have received 110 citations.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Transactions on Materials for Electron Devices, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Transactions on Materials for Electron Devices style. No sign-up. |
| Publishes research in | Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Semiconductor materials and interfaces Electronic and Structural Properties of Oxides |
| ISSN | 2993-1576 |
| Citation impact (2-yr) | 1.51 |
| h-index | 6 |
| i10-index | 1 |
| Top institutions publishing here | National Yang Ming Chiao Tung University |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision…
Two-dimensional (2D) materials are today potential candidates for next generation ultra-scaled devices. After the boost provided by graphene, the 2D materials family is still quickly expanding and it is now clear that their properties may suit specific target applications but not all of them as originally expected by device engineers. Among them, a silicon-based 2D…
The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry applications closer than ever. One of the most interesting aspects of hafnia compared to other ferroelectric materials is the possibility of scaling film thicknesses down to the 10 nm regime and even below. However, going significantly below 10 nm poses some challenges…
This article aims to comprehensively explore silicon, glass, organic, and RDL (Redistribution Layer) interposers, comparing their technological features, advantages, and associated challenges. Additionally, a pioneering technology, termed Hyper RDL interposer (HRDL), which integrates temporary bonding and low-temperature hybrid bonding techniques to create an RDL interposer with low warpage, high layer count, and minimal thermal accumulation…
The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopted in recent decades to enhance the performance of Si integrated circuits. The imperative to uphold Moore's Law for both More Moore and More than…
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