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physica status solidi (a) is a peer-reviewed journal published by Wiley, covering Semiconductor materials and devices, Semiconductor materials and interfaces, GaN-based semiconductor devices and materials.
| Publisher | Wiley |
|---|---|
| Reference style | Author–year (Chicago) Author–year — (Smith, 2023) in the text Smith, Ada, Ben Jones, and Cara Lee. 2023. "A Representative Article Title." physica status solidi (a) 12 (3): 45–58.
Formats any DOI in physica status solidi (a) style. No sign-up. |
| Publishes research in | Semiconductor materials and devices Semiconductor materials and interfaces GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Silicon and Solar Cell Technologies |
| ISSN | 0031-8965 |
| Citation impact (2-yr) | 1.68 |
| h-index | 153 |
| i10-index | 11,809 |
| Total citations | 425,498 |
| Top institutions publishing here | Russian Academy of Sciences |
| Journal website | www3.interscience.wiley.com |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Results are presented of an investigation on the origin of the low temperature coefficient of resistance in NiCr thin films. It is shown that this low temperature coefficient is an intrinsic property of the alloy. Besides NiCr a large number of disordered alloys containing transition metals have similar conduction properties, both in bulk and as…
Abstract The nitrogen vacancy and some nickel related defects in diamond can be observed as single quantum systems in diamond by their fluorescence. The fabrication of single colour centres occurs via generation of vacancies or via controlled nitrogen implantation in the case of the nitrogen vacancy (NV) centre. The NV centre shows an electron paramagnetic…
It has been recognized that Raman scattering spectroscopy is a powerful tool to characterize SiC crystals non-destructively. We review recent significant developments in the use of Raman scattering to study structural and electronic properties of SiC crystals. The areas to be discussed in the first part include polytype identification, evaluation of stacking disorder and ion-implantation…
Abstract Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely…
An improved analysis of low frequency trapping noise in a MOS device is proposed. This analysis takes into account the supplementary fluctuations of the mobility induced by those of the interface charge. It enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual…
