We review the recent, mainly theoretical, progress in the study of topological nodal line semimetals in three dimensions. In these semimetals, the conduction and the valence bands cross each other along a one-dimensional curve in the three-dimensional Brillouin zone, and any perturbation that preserves a certain symmetry group (generated by either spatial symmetries or time-reversal…
Chinese Physics B Template
Write in a clean editor, then format for Chinese Physics B in one click — DocuGuru applies the official IOP Publishing template with numbered references and exports a submission-ready PDF plus the editable LaTeX source. Free to start.
About the Chinese Physics B format
Chinese Physics B is a peer-reviewed journal published by IOP Publishing, covering Quantum Information and Cryptography, Advanced Fiber Laser Technologies, Quantum and electron transport phenomena.
| Publisher | IOP Publishing |
|---|---|
| Reference style | Numbered (IOP) Numbered — [1], [2] in the text [1] Smith A, Jones B and Lee C 2023 A representative article title Chinese Physics B 12 45–58
Formats any DOI in Chinese Physics B style. No sign-up. |
| Publishes research in | Quantum Information and Cryptography Advanced Fiber Laser Technologies Quantum and electron transport phenomena Cold Atom Physics and Bose-Einstein Condensates Semiconductor materials and devices |
| ISSN | 1674-1056 |
| Citation impact (2-yr) | 1.07 |
| h-index | 83 |
| i10-index | 4,594 |
| Total citations | 150,171 |
| Top institutions publishing here | Chinese Academy of Sciences |
| Journal website | iopscience.iop.org |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Papers published in Chinese Physics B per year
Citation impact of Chinese Physics B by publication year
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Most-cited papers in Chinese Physics B
Based upon advances in theoretical algorithms, modeling and simulations, and computer technologies, the rational design of materials, cells, devices, and packs in the field of lithium-ion batteries is being realized incrementally and will at some point trigger a paradigm revolution by combining calculations and experiments linked by a big shared database, enabling accelerated development of…
In this paper, we review various types of graphene-based strain sensors. Graphene is a monolayer of carbon atoms, which exhibits prominent electrical and mechanical properties and can be a good candidate in compact strain sensor applications. However, a perfect graphene is robust and has a low piezoresistive sensitivity. So scientists have been driven to increase…
The lead-free perovskite solar cells (PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3, because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite. The progress of…
Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS2, are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can…