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IEEE Transactions on Device and Materials Reliability is a peer-reviewed journal published by IEEE, covering Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis. Over its lifetime it has published 2,791 papers, which have received 47,707 citations.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Transactions on Device and Materials Reliability, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Transactions on Device and Materials Reliability style. No sign-up. |
| Abbreviation (ISO-4) | TDMR |
| Publishes research in | Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis Electronic Packaging and Soldering Technologies Ferroelectric and Negative Capacitance Devices |
| ISSN | 1530-4388 |
| Citation impact (2-yr) | 1.61 |
| h-index | 89 |
| i10-index | 1,066 |
| Top institutions publishing here | IMEC |
| Journal website | ieeexplore.ieee.org |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for…
The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for…
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This suggests a…
High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it…
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed high-performing ULSI applications. The review assesses recent proposals to circumvent the SCE in SOI MOSFETs and a short evaluation of strengths…
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