Write in a clean editor, then format for Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena in one click — DocuGuru applies the official AIP Publishing template with numbered references and exports a submission-ready PDF plus the editable LaTeX source. Free to start.
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena is a peer-reviewed journal published by AIP Publishing, covering Semiconductor materials and devices, Semiconductor Quantum Structures and Devices, Electron and X-Ray Spectroscopy Techniques.
| Publisher | AIP Publishing |
|---|---|
| Reference style | Numbered (AIP) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena 12, 45 (2023).
Formats any DOI in Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena style. No sign-up. |
| Publishes research in | Semiconductor materials and devices Semiconductor Quantum Structures and Devices Electron and X-Ray Spectroscopy Techniques Advancements in Photolithography Techniques Semiconductor materials and interfaces |
| ISSN | 0734-211X |
| h-index | 104 |
| i10-index | 1,524 |
| Total citations | 63,192 |
| Top institutions publishing here | AT&T (United States) |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Ions of kiloelectron volt energies incident on a solid surface produce a number of effects: several atoms are sputtered off, several electrons are emitted, chemical reactions may be induced, atoms are displaced from their equilibrium positions, and ions implant themselves in the solid, altering its properties. Some of these effects, such as sputtering and implantation…
The energy location for the interface state density Nss minimum of the insulator–semiconductor (I–S) interface and the Fermi-level pinning position at the metal–semiconductor (M–S) interface are shown to coincide and to lie at the same position of 5.0 eV from the vacuum level for major tetrahedral semiconductors. Neither the unified defect model nor the metal…
The scanning tunneling microscope is used to study the spectroscopy of p-type, n-type, and oxygen-covered GaAs(110) surfaces. On the clean surface, three components of the current are identified—tunneling out of valence-band states, tunneling into conduction-band states, and tunneling through dopant-induced states in the semiconductor. The results are compared with a theoretical computation of the tunneling…
The advanced unified defect model (AUDM) for GaAs proposed in this paper can be looked upon as a refinement of the unified defect model (UDM) proposed in 1979 to explain Fermi level pinning on 3–5 compounds due to metals or nonmetals. The refinement lies in identifying the defect producing pinning at 0.75 and 0.5 eV…
This paper presents a spectroscopic study using the techniques of ellipsometry and infrared (IR) absorption spectroscopy of the chemical bonding in silicon dioxide (SiO2) films grown in dry oxygen ambients at temperatures between 550 and 1000 °C. We find that the index of refraction at 632.8 nm increases and the frequency of the dominant IR…
