Metamaterials serve as versatile platforms for demonstrating condensed matter physics and non-equilibrium phenomena, with electrical circuits emerging as a particularly compelling medium. This review highlights recent advances in the experimental circuit realizations of topological, non-Hermitian, non-linear, Floquet, and other notable phenomena. Initially performed mostly with passive electrical components, topolectrical circuits have evolved to incorporate active…
APL Electronic Devices Template
Write in a clean editor, then format for APL Electronic Devices in one click — DocuGuru applies the official AIP Publishing template with numbered references and exports a submission-ready PDF plus the editable LaTeX source. Free to start.
About the APL Electronic Devices format
APL Electronic Devices is a peer-reviewed journal published by AIP Publishing, covering GaN-based semiconductor devices and materials, Semiconductor materials and devices, Advanced Sensor and Energy Harvesting Materials. Over its lifetime it has published 188 papers, which have received 351 citations.
| Publisher | AIP Publishing |
|---|---|
| Reference style | Numbered (AIP) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, APL Electronic Devices 12, 45 (2023).
Formats any DOI in APL Electronic Devices style. No sign-up. |
| Publishes research in | GaN-based semiconductor devices and materials Semiconductor materials and devices Advanced Sensor and Energy Harvesting Materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies |
| Papers published last year | ≈117 |
| ISSN | 2995-8423 |
| Citation impact (2-yr) | 1.87 |
| h-index | 8 |
| i10-index | 6 |
| Open access | Yes — indexed in DOAJ |
| Top institutions publishing here | The Ohio State University |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Most-cited papers in APL Electronic Devices
Band alignment of metal contacts to 2D semiconductors often deviates from the ideal Schottky–Mott (SM) rule due to non-idealities such as the formations of interface dipoles and metal-induced gap states (MIGS). Although MIGS can be suppressed using van der Waals (vdW) contacts, the interface dipole is hard to eliminate due to the electronegativity difference of…
Power semiconductor devices, spanning blocking voltages from a few volts to tens of thousands of volts, are critical for efficient energy conversion in numerous applications and serve as key enablers of carbon neutrality. These devices can be realized in either vertical or lateral architectures, with the former preferred for high-power discrete devices and the latter…
The advancement of triboelectric nanogenerators (TENGs) and piezoelectric nanogenerators (PENGs) have impacted different fields of emerging technological applications by changing wasted mechanical energy into useful electrical energy. Specifically, TENGs and PENGs contribute as a power source for different applications, such as health and fitness real-time monitoring and therapeutic interventions and flexible smart fabric wearable devices…
In recent time, the emergence of optoelectronic memristors has opened up new opportunities for the scientific community to realize their neurological functionalities of optoelectronic systems. Neuromorphic optoelectronic memristors (NOMs) can directly respond to optical pulses with possessing the desirable features of high bandwidth, zero latency, and low crosstalk. They can act as artificial ocular (vision)…