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Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics is a peer-reviewed journal published by Wiley, covering GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices.
| Publisher | Wiley |
|---|---|
| Reference style | Author–year (Chicago) Author–year — (Smith, 2023) in the text Smith, Ada, Ben Jones, and Cara Lee. 2023. "A Representative Article Title." Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 12 (3): 45–58.
Formats any DOI in Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics style. No sign-up. |
| Publishes research in | GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Semiconductor materials and devices Ga2O3 and related materials ZnO doping and properties |
| ISSN | 1610-1634 |
| h-index | 67 |
| i10-index | 2,068 |
| Total citations | 70,393 |
| Top institutions publishing here | Centre National de la Recherche Scientifique |
| Journal website | www3.interscience.wiley.com |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Abstract We studied the possible correlations between defects and photoluminescence spectra in ZnO nanoparticles of sizes ranging from 43 nm to 73 nm in diameter. The defects and impurity contents were characterized by Fourier‐transform infrared (FTIR) spectroscopy. The results show fewer carboxylate and hydroxyl impurities for particles of larger sizes. No significant variation in oxygen…
Abstract PALSfit is a new Windows program for the analysis of positron lifetime spectra. PALSfit combines into one interactive Windows program the features of our previous PATFIT program package, such as data input, least‐squares fitting routines as well as graphical displays. A number of options are available, including constraints on positron lifetimes, intensities, background and…
An insight into the present understanding of point defects in the simplest and the most radiation-resistant oxide glass, glassy silicon dioxide (silica) is presented. The defects and their generation processes in glassy and α-quartz forms of silicon dioxide are significantly different. The only defect, confirmed to be similar in both materials, is oxygen vacancy. In…
Abstract Transparent conductive Sn‐doped β‐Ga 2 O 3 single crystal with high crystallinity was successfully fabricated as a substrate for the growth of GaN‐based compounds. Sn‐doped β‐Ga 2 O 3 single crystals were grown using a floating zone (FZ) method, and the properties of electrical conductivity, optical transmittance, and crystallinity were characterized to optimize the…
Abstract Defect states in a representative amorphous oxide semiconductor, a‐InGaZnO 4 , were studied by optical analyses and first‐principle calculations. The optical analyses suggested that the as‐deposited a‐IGZO film have weak subgap absorptions around 0.6 and 2 eV. Local density approximation calculations showed that an oxygen defect works as an electron trap as well as…
