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npj 2D Materials and Applications is a peer-reviewed journal published by Springer Nature, covering 2D Materials and Applications, Graphene research and applications, MXene and MAX Phase Materials. Over its lifetime it has published 715 papers, which have received 26,732 citations.
| Publisher | Springer Nature |
|---|---|
| Reference style | Superscript numbered (Nature) Superscript — small raised numerals in the text 1. Smith, A., Jones, B. & Lee, C. A representative article title. npj 2D Materials and Applications 12, 45–58 (2023).
Formats any DOI in npj 2D Materials and Applications style. No sign-up. |
| Publishes research in | 2D Materials and Applications Graphene research and applications MXene and MAX Phase Materials Perovskite Materials and Applications Topological Materials and Phenomena |
| ISSN | 2397-7132 |
| Citation impact (2-yr) | 7.54 |
| h-index | 81 |
| i10-index | 441 |
| Article processing charge | $2,990 |
| Open access | Yes — indexed in DOAJ |
| Top institutions publishing here | National Institute for Materials Science |
| Journal website | www.nature.com |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build…
Abstract Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out-of-plane and in-plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h-BN, with…
Abstract Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS 2 , WSe 2 , and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially interesting candidates for various applications in optics and optoelectronics. Here, we review their optical and optoelectronic properties with emphasis…
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness dimension and unique physical properties. A wide variety of emerging spintronic device concepts will greatly benefit from the use of 2D materials, leading a better way to manipulating spin. In this review, we discuss various 2D materials, including graphene and other inorganic 2D…
Abstract Ti 3 C 2 T x belongs to the family of MXenes, 2D materials with an attractive combination of functional properties suitable for applications such as batteries, supercapacitors, and strain sensors. However, the fabrication of devices and functional coatings based on Ti 3 C 2 T x remains challenging as they are prone to…
