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IEEE Open Journal of the Solid-State Circuits Society is a peer-reviewed journal published by IEEE, covering Analog and Mixed-Signal Circuit Design, Radio Frequency Integrated Circuit Design, Advancements in PLL and VCO Technologies. Over its lifetime it has published 209 papers, which have received 1,411 citations.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Open Journal of the Solid-State Circuits Society, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Open Journal of the Solid-State Circuits Society style. No sign-up. |
| Publishes research in | Analog and Mixed-Signal Circuit Design Radio Frequency Integrated Circuit Design Advancements in PLL and VCO Technologies Advancements in Semiconductor Devices and Circuit Design Advanced Memory and Neural Computing |
| ISSN | 2644-1349 |
| Citation impact (2-yr) | 2.08 |
| h-index | 20 |
| i10-index | 46 |
| Article processing charge | $1,850 |
| Open access | Yes — indexed in DOAJ |
| Top institutions publishing here | Tsinghua University |
| Journal website | ieeexplore.ieee.org |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
The Noise-Shaping (NS) SAR is an attractive new ADC architecture that emerged in the last decade. It combines the advantages of the SAR and the DSM architectures. NS SAR shows excellent potential for high efficiency and low cost, and is highly suited to process scaling. This paper gives an overview of the history of NS-SAR,…
This paper presents challenges and design perspectives for terahertz (THz) integrated circuits and systems. THz means different things to different people. From International Telecommunication Union (ITU) perspective, THz radiation primarily means frequency range from 300 – 3000 GHz. However, recently, a more expansive definition of THz has emerged that covers frequencies from 100 GHz to…
A 240 <inline-formula> <tex-math notation="LaTeX">$\times$ </tex-math></inline-formula> 160 single-photon avalanche diode (SPAD) sensor integrated with a 3D-stacked 65nm/65nm CMOS technology is reported for direct time-of-flight (dToF) 3D imaging in mobile devices. The top tier is occupied by backside illuminated SPADs with 16 <inline-formula> <tex-math notation="LaTeX">$\mu {\mathrm{ m}}$ </tex-math></inline-formula> pitch and 49.7% fill-factor. The SPADS consists of…
Nonvolatile memory (NVM)-based computing-in-memory (nvCIM) is a promising candidate for artificial intelligence (AI) edge devices to overcome the latency and energy consumption imposed by the movement of data between memory and processors under the von Neumann architecture. This paper explores the background and basic approaches to nvCIM implementation, including input methodologies, weight formation and placement,…
The demand for chiplet integration using 2.5D and 3D advanced packaging technologies has surged, driven by the exponential growth in computing performance required by artificial intelligence and machine learning (AI/ML). This article reviews these advanced packaging technologies and emphasizes critical design considerations for high-bandwidth chiplet interconnects, which are vital for efficient integration. We address challenges…
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