In this paper, we proposed a 2 dimensional model of tripple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-junction formed by germanium and silicon materials in the source-channel junction and heterodielectric gate stack is used with Silicon Dioxide (SiO2) and Hafnium Dioxide (HfO2) as dielectric materials. The electrical characteristics like surface potential,…
Solid State Electronics Letters Template
Write in a clean editor, then format for Solid State Electronics Letters in one click — DocuGuru applies the official Elsevier template with numbered references and exports a submission-ready PDF plus the editable LaTeX source. Free to start.
About the Solid State Electronics Letters format
Solid State Electronics Letters is a peer-reviewed journal published by Elsevier, covering Advancements in Semiconductor Devices and Circuit Design, Analog and Mixed-Signal Circuit Design, Semiconductor materials and devices.
| Publisher | Elsevier |
|---|---|
| Reference style | Numbered (Elsevier) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, C. Lee, A representative article title, Solid State Electronics Letters 12 (2023) 45–58.
Formats any DOI in Solid State Electronics Letters style. No sign-up. |
| Publishes research in | Advancements in Semiconductor Devices and Circuit Design Analog and Mixed-Signal Circuit Design Semiconductor materials and devices Silicon Carbide Semiconductor Technologies Radio Frequency Integrated Circuit Design |
| ISSN | 2589-2088 |
| h-index | 11 |
| i10-index | 15 |
| Total citations | 361 |
| Article processing charge | $700 |
| Top institutions publishing here | JECRC University |
| Journal website | www.sciencedirect.com |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Papers published in Solid State Electronics Letters per year
Citation impact of Solid State Electronics Letters by publication year
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Most-cited papers in Solid State Electronics Letters
In this paper, we report the Fe doped MoS2 monolayer to improve the gas sensing properties. We investigated the electronic properties of Fe doped MoS2 for sensing Urea and Methanol using Density Functional Theory (DFT). Non-Equilibrium Green's Function (NEGF) was used to calculate the transport properties of the aforementioned nanomaterials. The absorption energy, charge transfer,…
Quantum-dot cellular automata (QCA) is a foremost archetype of field-coupled nanoscale devices. It is a non-von-Neumann, minimal energy dissipated model for conventional nano computing by transistor free logic. The field-coupled nanoscale models rely on limited field connections among nanoscale building modules which are organized in forms to complete convenient assessments. A fundamental device in QCA…
In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (n = 1.77) and GaN (n = 2.4). The LLO-µLEDs considerably improve light collimation, compared with conventional flip-chip µLEDs containing a…
In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied. The impact of back gate work function on analog/RF parameters like drain current (ID), transconductance (gm), transconductance generation factor (TGF), intrinsic gain, output…