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Chemical Vapor Deposition is a peer-reviewed journal published by Wiley, covering Semiconductor materials and devices, Copper Interconnects and Reliability, Electronic and Structural Properties of Oxides.
| Publisher | Wiley |
|---|---|
| Reference style | Author–year (Chicago) Author–year — (Smith, 2023) in the text Smith, Ada, Ben Jones, and Cara Lee. 2023. "A Representative Article Title." Chemical Vapor Deposition 12 (3): 45–58.
Formats any DOI in Chemical Vapor Deposition style. No sign-up. |
| Publishes research in | Semiconductor materials and devices Copper Interconnects and Reliability Electronic and Structural Properties of Oxides Metal and Thin Film Mechanics Catalytic Processes in Materials Science |
| ISSN | 0948-1907 |
| h-index | 70 |
| i10-index | 708 |
| Total citations | 28,504 |
| Top institutions publishing here | Centre National de la Recherche Scientifique |
| Journal website | www.cvd-journal.de |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Abstract This article presents an overview of the research highlights in graphene synthesis by CVD. The growth mechanisms over transition metals and alloys (with emphasis on Cu and Cu alloys) are discussed, including new developments and experiments in transfer‐free graphene growth on dielectric materials. The focus is on the role of the various synthesis parameters,…
Abstract Highly conformal coatings can be deposited inside narrow features, such as holes, using complementary self‐limiting reactions of two vapors with a surface. A simple theory is developed for the conditions needed to deposit coatings with uniform thickness in narrow holes of arbitrary cross section. Two conditions are found to be necessary: 1) certain minimum…
Abstract The growth and characteristics of nanocrystalline diamond thin films with thicknesses from 20 nm to less than 5 µm are reviewed. These materials contain between 95% and >99.9% diamond crystallites, the balance being made up from other forms of carbon. Within this class of materials there is a continuous range of composition, characteristics, and…
Perfectly conformal deposition into deep trenches or filling of them without keyhole formation is achieved (see Figure) by atomic layer deposition (ALD). Good conformality can be obtained with other CVD processes, but the unique surface-controlled, self-limiting growth mechanism of ALD may give the technique significant advantages over other methods for future generation IC technology.
Abstract Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275–400 °C using bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen as precursors. The ruthenium films were grown on thin Al 2 O 3 and TiO 2 films on glass. X‐ray diffraction (XRD) analysis indicated that the films were polycrystalline…
