This paper briefly discusses the possibility of obtaining coherent microwave radiation from crystals and gases. It will be shown that it is possible to obtain coherent microwave radiation by such methods, provided that a certain non equilibrium energy distribution is first produced. Methods are discussed for producing such a distribution. The amount of amplification which…
Transactions of the IRE Professional Group on Electron Devices Template
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About the Transactions of the IRE Professional Group on Electron Devices format
Transactions of the IRE Professional Group on Electron Devices is a peer-reviewed journal published by IEEE, covering Gyrotron and Vacuum Electronics Research, Plasma Diagnostics and Applications, Microwave Engineering and Waveguides.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," Transactions of the IRE Professional Group on Electron Devices, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in Transactions of the IRE Professional Group on Electron Devices style. No sign-up. |
| Publishes research in | Gyrotron and Vacuum Electronics Research Plasma Diagnostics and Applications Microwave Engineering and Waveguides Semiconductor Lasers and Optical Devices Acoustic Wave Resonator Technologies |
| ISSN | 0197-6370 |
| h-index | 10 |
| i10-index | 10 |
| Total citations | 337 |
| Top institutions publishing here | RTX (United States) |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
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Most-cited papers in Transactions of the IRE Professional Group on Electron Devices
Values of some of the wave characteristics used in traveling wave tube analysis are presented in the form of curves. These curves include data valid under conditions in which the gain parameter C is finite (with values up to 0.5) and for relatively large values of the space charge parameter QC (up to 2).
In some of the early traveling-wave tubes relatively high efficiencies and powers were observed. As more tubes were made, however, these results were not repeated and it became apparent that extremely wide variations in operation were obtained between tubes, with no obvious correspondence to observed structural variations. As a result an experimental program was undertaken…
In a unipolar “field-effect” transistor with the drain connection biased beyond “pinch-off” in respect to the gate, the potential distribution is difficult to determine by analytic methods. Approximate solution may readily be obtained except near the “extrapolated pinch-off point.” In this publication, an approximate solution is obtained valid over the entire length of the channel.