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Transactions of the IRE Professional Group on Electron Devices Template

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About the Transactions of the IRE Professional Group on Electron Devices format

Transactions of the IRE Professional Group on Electron Devices is a peer-reviewed journal published by IEEE, covering Gyrotron and Vacuum Electronics Research, Plasma Diagnostics and Applications, Microwave Engineering and Waveguides.

PublisherIEEE
Reference styleNumbered (IEEE)
Numbered — [1], [2] in the text
[1] A. Smith, B. Jones, and C. Lee, "A representative article title," Transactions of the IRE Professional Group on Electron Devices, vol. 12, no. 3, pp. 45–58, 2023.

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Publishes research inGyrotron and Vacuum Electronics Research Plasma Diagnostics and Applications Microwave Engineering and Waveguides Semiconductor Lasers and Optical Devices Acoustic Wave Resonator Technologies
ISSN0197-6370
h-index10
i10-index10
Total citations337
Top institutions publishing hereRTX (United States)
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Papers published in Transactions of the IRE Professional Group on Electron Devices per year

7
1952
24
1953
109
1954
1
2022

Citation impact of Transactions of the IRE Professional Group on Electron Devices by publication year

12
1952
148
1953
175
1954
1
2022

Citations each year’s papers have accumulated so far — the most recent years are still building up.

Most-cited papers in Transactions of the IRE Professional Group on Electron Devices

Amplification of microwave radiation by substances not in thermal equilibrium

J. Weber · 1 Jun 1953

This paper briefly discusses the possibility of obtaining coherent microwave radiation from crystals and gases. It will be shown that it is possible to obtain coherent microwave radiation by such methods, provided that a certain non equilibrium energy distribution is first produced. Methods are discussed for producing such a distribution. The amount of amplification which…

Traveling wave tube characteristics for finite values of C

C.K. Birdsall, George Raymond Brewer · 1 Aug 1954

Values of some of the wave characteristics used in traveling wave tube analysis are presented in the form of curves. These curves include data valid under conditions in which the gain parameter C is finite (with values up to 0.5) and for relatively large values of the space charge parameter QC (up to 2).

Factors affecting traveling-wave tube power capacity

C. C. Cutler, D. J. Brangaccio · 1 Jun 1953

In some of the early traveling-wave tubes relatively high efficiencies and powers were observed. As more tubes were made, however, these results were not repeated and it became apparent that extremely wide variations in operation were obtained between tubes, with no obvious correspondence to observed structural variations. As a result an experimental program was undertaken…

Joining solutions at the pinch-off point in “field-effect” transistor

R. C. Prim, W. Shockley · 1 Dec 1953

In a unipolar “field-effect” transistor with the drain connection biased beyond “pinch-off” in respect to the gate, the potential distribution is difficult to determine by analytic methods. Approximate solution may readily be obtained except near the “extrapolated pinch-off point.” In this publication, an approximate solution is obtained valid over the entire length of the channel.

Transactions of the IRE Professional Group on Electron Devices template — frequently asked questions

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What reference style does Transactions of the IRE Professional Group on Electron Devices use?
Transactions of the IRE Professional Group on Electron Devices uses Numbered (IEEE) references, shown as numbered [1], [2] markers in the text. DocuGuru formats every in-text citation and the reference list in this exact style automatically. A reference appears like this: [1] A. Smith, B. Jones, and C. Lee, "A representative article title," Transactions of the IRE Professional Group on Electron Devices, vol. 12, no. 3, pp. 45–58, 2023.
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