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IEEE Journal of the Electron Devices Society is a peer-reviewed journal published by IEEE, covering Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Negative Capacitance Devices. Over its lifetime it has published 1,964 papers, which have received 25,930 citations.
| Publisher | IEEE |
|---|---|
| Reference style | Numbered (IEEE) Numbered — [1], [2] in the text [1] A. Smith, B. Jones, and C. Lee, "A representative article title," IEEE Journal of the Electron Devices Society, vol. 12, no. 3, pp. 45–58, 2023.
Formats any DOI in IEEE Journal of the Electron Devices Society style. No sign-up. |
| Abbreviation (ISO-4) | JEDS |
| Publishes research in | Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices Silicon Carbide Semiconductor Technologies Thin-Film Transistor Technologies |
| ISSN | 2168-6734 |
| Citation impact (2-yr) | 2.4 |
| h-index | 64 |
| i10-index | 757 |
| Article processing charge | $1,350 |
| Open access | Yes — indexed in DOAJ |
| Top institutions publishing here | National Yang Ming Chiao Tung University |
| Journal website | ieeexplore.ieee.org |
| You get | A submission-ready PDF and the editable LaTeX source — ready to submit. |
Citations each year’s papers have accumulated so far — the most recent years are still building up.
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values…
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"…
The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode.
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage,…
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed.…
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